| PART |
Description |
Maker |
| MCR106 |
REVERSE BLOCKING TRIODE THYRISTORS
|
UTC[Unisonic Technologies]
|
| TIC108A TIC108B TIC108C TIC108D TIC108E TIC108M TI |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
|
Comset Semiconductor
|
| TIC116A TIC116B TIC116C TIC116D TIC116E TIC116M TI |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
|
Comset Semiconductor
|
| 2N3004 |
P-N-P-N PLANAR SILICON REVERSE-BLOCKING TRIODE THYRISTOR
|
New Jersey Semi-Conductor Products, Inc.
|
| 2N6171 2N6173 2N6174 |
SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING TRIODE THYRISTOR
|
Digitron Semiconductors
|
| MCR3918 MCR3818 |
Silicon Controlled Rectifier Reverse Blocking Triode Thyristor
|
MOTOROLA[Motorola, Inc]
|
| C122N |
Silicon controlled rectifier. Reverse blocking triode thyristor. 8 A RMS. Repetitive peak off-state voltage and repetitive peak reverse voltage 800 V.
|
Motorola
|
| P600M6A10 P600B6A1 P600A6A05 P600G6A4 P600G P600J |
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 1000V. Maximum RMS voltage 700V. Maximum DC blocking voltage 1000V
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 800V. Maximum RMS voltage 560V. Maximum DC blocking voltage 800V
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 600V. Maximum RMS voltage 420V. Maximum DC blocking voltage 600V
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 400V. Maximum RMS voltage 280V. Maximum DC blocking voltage 400V
SILICON RECTIFIER(VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 6.0 Amperes) 一般整流（电压范围- 50000伏特，电六点○安培）
|
WINGS[Wing Shing Computer Components]
Vishay Intertechnology, Inc.
|
| 2N6504-D |
Reverse Blocking Thyristors
|
ON Semiconductor
|
| IXRH50N80 IXRH50N60 |
IGBT with Reverse Blocking capability
|
IXYS[IXYS Corporation]
|
| DGT305SE18 DGT305RE |
Reverse Blocking Gate Turn-off Thyristor
|
Dynex Semiconductor
|
